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| FDZ206P P-Channel 2.5V Specified PowerTrench(R) BGA MOSFET February 2006 FDZ206P P-Channel 2.5V Specified PowerTrench(R) BGA MOSFET (R) General Description Combining Fairchild's advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ206P minimizes both PCB space and rDS(on). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low rDS(on). Features * -13 A, -20 V. rDS(on) = 9.5 m @ VGS = -4.5 V rDS(on) = 14.5 m @ VGS = -2.5 V * Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 * Ultra-thin package: less than 0.80 mm height when mounted to PCB * 0.65 mm ball pitch * 3.5 x 4 mm2 footprint * High power and current handling capability Applications * Battery management * Load switch * Battery protection Gate G S Index slot D Bottom Top TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (Note 1a) - Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range Ratings -20 12 -13 -60 2.2 -55 to +150 Units V V A W C Thermal Characteristics RJA RJB RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) (Note 1) 56 4.5 0.6 C/W Package Marking and Ordering Information Device Marking 206P Device FDZ206P Reel Size 13" Tape width 12mm Quantity 4000 (c)2006 Fairchild Semiconductor Corporation FDZ206P Rev. E (W) FDZ206P P-Channel 2.5V Specified PowerTrench(R) BGA MOSFET Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ rDS(on) ID(on) gFS Ciss Coss Crss TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Forward Leakage Gate-Body Reverse Leakage (Note 2) Test Conditions VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -16 V, VGS = -12 V, VGS = 12 V, VGS = 0 V VDS = 0 V VDS = 0 V Min Typ -20 -13 Max Units V mV/C Off Characteristics -1 -100 100 -0.6 -0.9 3.3 7 10 9 -60 58 4280 873 400 17 11 115 60 38 7 10 31 20 184 96 53 -1.5 A nA nA V mV/C m A S pF pF pF ns ns ns ns nC nC nC A V nS nC On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = - 4.5 V, ID = -13 A VGS = -2.5 V, ID = -10.5 A VGS = -4.5 V, ID = -13 A, TJ=125C VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -13 A VDS = -10 V, f = 1.0 MHz V GS = 0 V, 9.5 14.5 13 Dynamic Characteristics Switching Characteristics (Note 2) td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr Notes: 1. RJA is determined with the device mounted on a 1 in 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RJB, is defined for reference. For RJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RJC and RJB are guaranteed by design while RJA is determined by the user' board design. s Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -10 V, VGS = -4.5 V, VDS = -10 V, VGS = -4.5 V ID = -1 A, RGEN = 6 ID = -13 A, Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = -1.8 A Voltage Diode Reverse Recovery Time IF = -13A, Diode Reverse Recovery Charge diF/dt = 100 A/s (Note 2) -0.7 34 38 -1.8 -1.2 a) 56C/W when mounted on a 1in2 pad of 2 oz copper b) 119C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDZ206P Rev. E (W) (R) (R) (R) FDZ206P P-Channel 2.5V Specified PowerTrench(R) BGA MOSFET Dimensional Outline and Pad Layout FDZ206P Rev. E (W) FDZ206P P-Channel 2.5V Specified PowerTrench(R) BGA MOSFET Typical Characteristics 60 NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS =-4.5V 50 -ID, DRAIN CURRENT (A) -3.0V -2.5V -2.0V 1.8 VGS = -2.5V 1.6 -3.5V 40 30 20 10 0 0 0.5 1.4 -3.0V 1.2 -3.5V -4.0V 1 -4.5V 1 1.5 2 0.8 0 10 20 30 40 50 60 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.03 rDS(on), ON-RESISTANCE (OHM) 1.4 rDS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.3 1.2 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 o ID = -13A VGS = -4.5V ID = -6.5 A 0.025 0.02 TA = 125oC 0.015 0.01 TA = 25oC 0.005 1 2 3 4 5 125 150 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 60 VDS = -5V 50 40 30 20 10 0 0.5 1 1.5 2 2.5 o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) TA = -55 C 25 C 125 C o o VGS = 0V 10 TA = 125 C 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 25 C -55 C o o o -ID, DRAIN CURRENT (A) -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDZ206P Rev. E (W) FDZ206P P-Channel 2.5V Specified PowerTrench(R) BGA MOSFET Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -13A 4 VDS = -5V -10V 5000 4500 4000 CAPACITANCE (pF) -15V Ciss f = 1MHz VGS = 0 V 3500 3000 2500 2000 1500 1000 500 Coss Crss 3 2 1 0 0 10 20 30 40 50 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 rDS(on) LIMIT 10ms 100ms 1s 10s DC VGS = -4.5V SINGLE PULSE RJA = 119oC/W TA = 25oC 0.01 0.01 0.1 1 10 100 1ms 50 P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. -ID, DRAIN CURRENT (A) 10 40 SINGLE PULSE RJA = 119 C/W TA = 25C 30 1 20 0.1 10 0 0.01 0.1 1 10 t1, TIME (sec) 100 1000 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 RJA(t) = r(t) + RJA RJA = 119 C/W P(pk) 0.01 0.01 SINGLE PULSE t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDZ206P Rev. E (W) |
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